Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films

Silicon oxynitride films were deposited using a plasma-enhanced chemical vapor deposition process. The bond configurations of the constituent atoms in the deposited film were analyzed using x-ray photoelectron spectroscopy. Analysis of the Si 2p spectra showed the presence of nonstoichiometric silicon oxide and silicon oxynitride. Analysis of the binding energy shifts induced by Si-O and Si-N bond formation indicated an O-Si-N complex was present in the film matrix. Component balance analysis indicated that second-nearest-neighbor bond interactions were not the cause of these energy shifts and supported the presence of an O-Si-N complex. © 2005 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Naskar, S; Wolter, SD; Bower, CA; Stoner, BR; Glass, JT

Published Date

  • 2005

Published In

Volume / Issue

  • 87 / 26

Start / End Page

  • 1 - 3

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2158022

Citation Source

  • SciVal