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Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films

Publication ,  Journal Article
Naskar, S; Wolter, SD; Bower, CA; Stoner, BR; Glass, JT
Published in: Applied Physics Letters
December 1, 2005

Silicon oxynitride films were deposited using a plasma-enhanced chemical vapor deposition process. The bond configurations of the constituent atoms in the deposited film were analyzed using x-ray photoelectron spectroscopy. Analysis of the Si 2p spectra showed the presence of nonstoichiometric silicon oxide and silicon oxynitride. Analysis of the binding energy shifts induced by Si-O and Si-N bond formation indicated an O-Si-N complex was present in the film matrix. Component balance analysis indicated that second-nearest-neighbor bond interactions were not the cause of these energy shifts and supported the presence of an O-Si-N complex. © 2005 American Institute of Physics.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 2005

Volume

87

Issue

26

Start / End Page

1 / 3

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Naskar, S., Wolter, S. D., Bower, C. A., Stoner, B. R., & Glass, J. T. (2005). Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films. Applied Physics Letters, 87(26), 1–3. https://doi.org/10.1063/1.2158022
Naskar, S., S. D. Wolter, C. A. Bower, B. R. Stoner, and J. T. Glass. “Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films.” Applied Physics Letters 87, no. 26 (December 1, 2005): 1–3. https://doi.org/10.1063/1.2158022.
Naskar S, Wolter SD, Bower CA, Stoner BR, Glass JT. Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films. Applied Physics Letters. 2005 Dec 1;87(26):1–3.
Naskar, S., et al. “Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films.” Applied Physics Letters, vol. 87, no. 26, Dec. 2005, pp. 1–3. Scopus, doi:10.1063/1.2158022.
Naskar S, Wolter SD, Bower CA, Stoner BR, Glass JT. Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films. Applied Physics Letters. 2005 Dec 1;87(26):1–3.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 2005

Volume

87

Issue

26

Start / End Page

1 / 3

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences