Bias-controlled chemical vapor deposition of diamond thin films

Journal Article (Journal Article)

The growth of diamond films on (001) Si substrates by bias-controlled chemical vapor deposition is described. The film quality as judged by Raman spectroscopy and scanning electron microscopy depends strongly on the biasing conditions. Under low current reverse bias conditions, highly facetted cubo-octahedral diamond growth exhibiting a single sharp Raman line at 1332 cm-1 was obtained, while biasing in high current conditions which created a plasma resulted in multiply twinned, microcrystalline growth incorporating sp2-bonded carbon into the diamond film.

Full Text

Duke Authors

Cited Authors

  • Lee, YH; Richard, PD; Bachmann, KJ; Glass, JT

Published Date

  • December 1, 1990

Published In

Volume / Issue

  • 56 / 7

Start / End Page

  • 620 - 622

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.102716

Citation Source

  • Scopus