Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy

Journal Article (Journal Article)

Highly oriented diamond thin films grown on silicon via microwave plasma chemical vapor deposition were examined by transmission electron microscopy. In the plan view, defects appearing at the grain boundary were easily observed. (100) faceted grains that appeared to have coalesced were connected at their interfaces by dislocations characteristic of a low angle grain boundary. From Burgers vector calculations and electron diffraction patterns, the azimuthal rotation between grains was measured to be between 0 and 6°. The defect densities of these films are compared to reports from (100) textured randomly oriented films, and the relative improvement due to the reduction of misorientation and grain boundary angles is discussed. © 1994, Materials Research Society. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Sivazlian, FR; Glass, JT; Stoner, BR

Published Date

  • January 1, 1994

Published In

Volume / Issue

  • 9 / 10

Start / End Page

  • 2487 - 2489

Electronic International Standard Serial Number (EISSN)

  • 2044-5326

International Standard Serial Number (ISSN)

  • 0884-2914

Digital Object Identifier (DOI)

  • 10.1557/JMR.1994.2487

Citation Source

  • Scopus