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Field emission characteristics of diamond coated silicon field emitters

Publication ,  Journal Article
Liu, J; Zhirnov, VV; Myers, AF; Wojak, GJ; Choi, WB; Hren, JJ; Wolter, SD; McClure, MT; Stoner, BR; Glass, JT
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
March 1, 1995

Single crystal silicon field emitters have been modified by surface deposition of diamond using bias-enhanced microwave plasma chemical vapor deposition. Polycrystalline diamond with a high nucleation density (1010/cm2) and small grain size (<20 nm) was achieved on silicon field emitters. Field emission from these diamond coated emitters exhibited significant enhancement both in total emission current and stability compared to pure silicon emitters. A large effective emitting area comparable to the tip surface area was obtained from a Fowler-Nordheim analysis. The effective work function of the polycrystalline diamond coated emitter surface was found to be larger than that of a pure silicon emitter surface.

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Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

0734-211X

Publication Date

March 1, 1995

Volume

13

Issue

2

Start / End Page

422 / 426
 

Citation

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Liu, J., Zhirnov, V. V., Myers, A. F., Wojak, G. J., Choi, W. B., Hren, J. J., … Glass, J. T. (1995). Field emission characteristics of diamond coated silicon field emitters. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13(2), 422–426. https://doi.org/10.1116/1.587961
Liu, J., V. V. Zhirnov, A. F. Myers, G. J. Wojak, W. B. Choi, J. J. Hren, S. D. Wolter, M. T. McClure, B. R. Stoner, and J. T. Glass. “Field emission characteristics of diamond coated silicon field emitters.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 13, no. 2 (March 1, 1995): 422–26. https://doi.org/10.1116/1.587961.
Liu J, Zhirnov VV, Myers AF, Wojak GJ, Choi WB, Hren JJ, et al. Field emission characteristics of diamond coated silicon field emitters. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995 Mar 1;13(2):422–6.
Liu, J., et al. “Field emission characteristics of diamond coated silicon field emitters.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 13, no. 2, Mar. 1995, pp. 422–26. Scopus, doi:10.1116/1.587961.
Liu J, Zhirnov VV, Myers AF, Wojak GJ, Choi WB, Hren JJ, Wolter SD, McClure MT, Stoner BR, Glass JT. Field emission characteristics of diamond coated silicon field emitters. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995 Mar 1;13(2):422–426.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

0734-211X

Publication Date

March 1, 1995

Volume

13

Issue

2

Start / End Page

422 / 426