Electron microscopy of defects in epitaxical β-SiC thin films grown on silicon and carbon {0001} faces of α-SiC substrates

Defects present in β-SiC thin films epitaxically grown on hexagonal 6H α-SiC substrates via chemical vapor deposition have been characterized by transmission electron microscopy. These defects are different from those previously observed in β-SiC films grown on (100) silicon, which were predominantly stacking faults and microtwins. The most common defects in the films grown on α-SiC were large domains rotated 60° with respect to each other and were identified as double positioning boundaries. These boundaries are a special type of incoherent twin boundary. Differences observed in films grown on either the silicon or carbon face of the {0001} α-SiC are characterized as a function of the mechanism of formation of the defects and type of substrate used for growth.

Duke Authors

Cited Authors

  • More, KL; Hua, SK; Glass, JT; Davis, RF

Published Date

  • 1990

Published In

  • Journal of the American Ceramic Society

Volume / Issue

  • 73 / 5

Start / End Page

  • 1283 - 1288

Citation Source

  • SciVal