Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition
Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C directions parallel to the SiC within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.
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