Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition

Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.

Full Text

Duke Authors

Cited Authors

  • Stoner, BR; Glass, JT

Published Date

  • 1992

Published In

Volume / Issue

  • 60 / 6

Start / End Page

  • 698 - 700

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.106541

Citation Source

  • SciVal