Electron emission from diamond coated silicon field emitters

Published

Journal Article

Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical vapor deposition system. A diamond nucleation density greater than 1010/cm2 with small grain sizes (<25 nm) was achieved on the surfaces of silicon emitters with nanometer scale curvature. Field emission from these diamond coated silicon emitters exhibited significant enhancement compared to the pure Si emitters both in total emission current and stability. Using a Fowler-Nordheim analysis a very large effective emitting area of nearly 10-11 cm2 was obtained from the diamond coated Si emitters compared to that of uncoated Si emitters (10-16 cm 2). This area was found to be comparable to the entire tip surface area. © 1994 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Liu, J; Zhirnov, VV; Wojak, GJ; Myers, AF; Choi, WB; Hren, JJ; Wolter, SD; McClure, MT; Stoner, BR; Glass, JT

Published Date

  • December 1, 1994

Published In

Volume / Issue

  • 65 / 22

Start / End Page

  • 2842 - 2844

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.112538

Citation Source

  • Scopus