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Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

Publication ,  Journal Article
Sivazlian, FR; Stoner, BR; Glass, JT
Published in: Journal of Materials Research
January 1, 1995

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition. © 1995, Materials Research Society. All rights reserved.

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Published In

Journal of Materials Research

DOI

EISSN

2044-5326

ISSN

0884-2914

Publication Date

January 1, 1995

Volume

10

Issue

2

Start / End Page

425 / 430

Related Subject Headings

  • Materials
  • 5104 Condensed matter physics
  • 4017 Mechanical engineering
  • 4016 Materials engineering
  • 0913 Mechanical Engineering
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics
 

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Sivazlian, F. R., Stoner, B. R., & Glass, J. T. (1995). Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition. Journal of Materials Research, 10(2), 425–430. https://doi.org/10.1557/JMR.1995.0425
Sivazlian, F. R., B. R. Stoner, and J. T. Glass. “Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition.” Journal of Materials Research 10, no. 2 (January 1, 1995): 425–30. https://doi.org/10.1557/JMR.1995.0425.
Sivazlian FR, Stoner BR, Glass JT. Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition. Journal of Materials Research. 1995 Jan 1;10(2):425–30.
Sivazlian, F. R., et al. “Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition.” Journal of Materials Research, vol. 10, no. 2, Jan. 1995, pp. 425–30. Scopus, doi:10.1557/JMR.1995.0425.
Sivazlian FR, Stoner BR, Glass JT. Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition. Journal of Materials Research. 1995 Jan 1;10(2):425–430.
Journal cover image

Published In

Journal of Materials Research

DOI

EISSN

2044-5326

ISSN

0884-2914

Publication Date

January 1, 1995

Volume

10

Issue

2

Start / End Page

425 / 430

Related Subject Headings

  • Materials
  • 5104 Condensed matter physics
  • 4017 Mechanical engineering
  • 4016 Materials engineering
  • 0913 Mechanical Engineering
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics