Diamond deposition using a planar radio frequency inductively coupled plasma

Journal Article (Journal Article)

A planar radio frequency inductively coupled plasma has been used to deposit diamond onto scratched silicon. This plasma source has been developed recently for use in large area semiconductor processing and holds promise as a method for scale up of diamond growth reactors. Deposition occurs in an annulus which coincides with the area of most intense optical emission from the plasma. Well-faceted diamond particles are produced when the substrate is immersed in the plasma.© 1995 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Bozeman, SP; Tucker, DA; Stoner, BR; Glass, JT; Hooke, WM

Published Date

  • December 1, 1995

Published In

Start / End Page

  • 3579 -

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.113793

Citation Source

  • Scopus