Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition

Epitaxial films of cubic β-SiC(111) have been grown via chemical vapor deposition at 1683 K on (0001) substrates of hexagonal 6H α-SiC. Optical microscopy of the surface indicated that a decrease in the ratio of the sum of the C and Si source gases to the H2 carrier gas changed the crystallization behavior from polycrystalline to monocrystalline. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the substrate/film interface and very few defects within the bulk of the film.

Full Text

Duke Authors

Cited Authors

  • Kong, HS; Glass, JT; Davis, RF

Published Date

  • 1986

Published In

Volume / Issue

  • 49 / 17

Start / End Page

  • 1074 - 1076

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.97479

Citation Source

  • SciVal