Thickness dependence of the MoO(3) blocking layers on ZnO nanorod-inverted organic photovoltaic devices.


Journal Article

Organic solar cells based on vertically aligned zinc oxide nanorod arrays (ZNR) in an inverted structure of indium tin oxide (ITO)∕ZNR∕poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester(P3HT:PCBM)∕MoO(3)∕aluminum(Al) were studied. We found that the optimum MoO(3) layer thickness condition of 20 nm, the MoO(3) can effectively decrease the probability of bimolecular recombination either at the Al interface or within the active layer itself. For this optimum condition we get a power conversion efficiency of 2.15%, a short-circuit current density of 9.02 mA∕cm(2), an open-circuit voltage of 0.55V, and a fill factor of 0.44 under 100 mW∕cm(2) irradiation. Our investigations also show that the highly crystallized ZNR can create short and continuous pathways for electron transport and increase the contact area between the ZNR and the organic materials.

Full Text

Duke Authors

Cited Authors

  • Wang, M; Li, Y; Huang, H; Peterson, ED; Nie, W; Zhou, W; Zeng, W; Huang, W; Fang, G; Sun, N; Zhao, X; Carroll, DL

Published Date

  • March 7, 2011

Published In

Volume / Issue

  • 98 / 10

Start / End Page

  • 103305 -

PubMed ID

  • 21464889

Pubmed Central ID

  • 21464889

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.3554381


  • eng

Conference Location

  • United States