Fabrication of submicron devices on the (011) cleave surface of a cleaved-edge-overgrowth GaAs/AlGaAs crystal
Journal Article
We describe the fabrication of submicron devices on the (011) cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of cleaved-edge-overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam polymethyl methacrylate resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate functional gate-controlled quantum point contact constrictions placed 9 m from one edge of the cleave surface. © 2012 American Institute of Physics.
Full Text
Duke Authors
Cited Authors
- Chang, AM; Zhang, H; Pfeiffer, LN; West, KW
Published Date
- March 19, 2012
Published In
Volume / Issue
- 100 / 12
International Standard Serial Number (ISSN)
- 0003-6951
Digital Object Identifier (DOI)
- 10.1063/1.3694052
Citation Source
- Scopus