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Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Publication ,  Journal Article
Wang, YQ; Wang, ZL; Brown, T; Brown, A; May, G
Published in: Journal of Electronic Materials
January 1, 2000
Published version (DOI)

High-resolution transmission electron microscopy has been employed to study the microstructure of GaAs lattice-matched GaInP heterostructures grown by solid source molecular beam epitaxy. It is found that the GaInP epilayers undergo lateral compositional modulation at a growth temperature of 520 °C. The modulating spacing is irregular, varying between 5.0-15.0 nm. The compositional difference in the two decomposed phases is estimated between 0.14-2.1 at.%, which is far from thermal equilibrium. High-resolution TEM observation shows that, corresponding to the contrast modulation, there exist considerable lattice distortions nearly parallel to the growth direction inside the GaInP epilayers. In the distorted regions, dislocations of 60°-type are frequently observed. Factors that may contribute to the compositional modulation are discussed.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Journal of Electronic Materials

DOI

10.1007/s11664-000-0121-5

ISSN

0361-5235

Publication Date

January 1, 2000

Volume

29

Issue

12

Start / End Page

1372 / 1379

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Wang, Y. Q., Wang, Z. L., Brown, T., Brown, A., & May, G. (2000). Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures. Journal of Electronic Materials, 29(12), 1372–1379. https://doi.org/10.1007/s11664-000-0121-5
Wang, Y. Q., Z. L. Wang, T. Brown, A. Brown, and G. May. “Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures.” Journal of Electronic Materials 29, no. 12 (January 1, 2000): 1372–79. https://doi.org/10.1007/s11664-000-0121-5.
Wang YQ, Wang ZL, Brown T, Brown A, May G. Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures. Journal of Electronic Materials. 2000 Jan 1;29(12):1372–9.
Wang, Y. Q., et al. “Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures.” Journal of Electronic Materials, vol. 29, no. 12, Jan. 2000, pp. 1372–79. Scopus, doi:10.1007/s11664-000-0121-5.
Wang YQ, Wang ZL, Brown T, Brown A, May G. Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures. Journal of Electronic Materials. 2000 Jan 1;29(12):1372–1379.
Journal cover image

Published In

Journal of Electronic Materials

DOI

10.1007/s11664-000-0121-5

ISSN

0361-5235

Publication Date

January 1, 2000

Volume

29

Issue

12

Start / End Page

1372 / 1379

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics