GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology

Published

Journal Article

High-performance digital integrated circuits have been fabricated for the first time with low-temperature buffer GaAs MESFET technology. The new materials structure eliminates sidegating and light sensitivity, and improves FET performance. Individual 0.2 μm gate length transistors have a gm of 600 mS/mm and an extrapolated fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz. © 1989 IEEE.

Full Text

Duke Authors

Cited Authors

  • Delaney, MJ; Chou, CS; Larson, LE; Jensen, JF; Deakin, DS; Brown, AS; Hooper, WW; Thompson, MA; McCray, LG; Rosenbaum, SE

Published Date

  • December 1, 1989

Published In

International Standard Serial Number (ISSN)

  • 0886-5930

Digital Object Identifier (DOI)

  • 10.1109/CICC.1989.56782

Citation Source

  • Scopus