48 GHz AlInAs/GaInAs heterojunction bipolar transistors
Publication
, Journal Article
Mishra, UK; Jensen, JF; Rensch, DB; Brown, AS; Pierce, MW; McCray, LG; Kargodorian, TV; Hoefer, WS; Kastris, RE
Published in: Technical Digest - International Electron Devices Meeting
December 1, 1988
The authors report on the DC and RF performance of self-aligned Al0.48In0.52As-Ga0.47In0.53As heterojunction bipolar transistors. The properties that make the AlInAns/GalnAs material system extremely attractive for heterojunction bipolar transistors are discussed. The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of heterojunction bipolar transistor devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5-μm × 5-μm emitter are reported.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting
ISSN
0163-1918
Publication Date
December 1, 1988
Start / End Page
873 / 875
Citation
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MLA
NLM
Mishra, U. K., Jensen, J. F., Rensch, D. B., Brown, A. S., Pierce, M. W., McCray, L. G., … Kastris, R. E. (1988). 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest - International Electron Devices Meeting, 873–875.
Mishra, U. K., J. F. Jensen, D. B. Rensch, A. S. Brown, M. W. Pierce, L. G. McCray, T. V. Kargodorian, W. S. Hoefer, and R. E. Kastris. “48 GHz AlInAs/GaInAs heterojunction bipolar transistors.” Technical Digest - International Electron Devices Meeting, December 1, 1988, 873–75.
Mishra UK, Jensen JF, Rensch DB, Brown AS, Pierce MW, McCray LG, et al. 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest - International Electron Devices Meeting. 1988 Dec 1;873–5.
Mishra, U. K., et al. “48 GHz AlInAs/GaInAs heterojunction bipolar transistors.” Technical Digest - International Electron Devices Meeting, Dec. 1988, pp. 873–75.
Mishra UK, Jensen JF, Rensch DB, Brown AS, Pierce MW, McCray LG, Kargodorian TV, Hoefer WS, Kastris RE. 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest - International Electron Devices Meeting. 1988 Dec 1;873–875.
Published In
Technical Digest - International Electron Devices Meeting
ISSN
0163-1918
Publication Date
December 1, 1988
Start / End Page
873 / 875