Analysis of defect structures and substrate/film interfaces of diamond thin films

In this research, diamond thin films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced chemical vapor deposition (CVD) have been examined by various transmission electron microscopy (TEM) techniques including bright and dark field, high resolution (HREM), selected area diffraction (SAD) and electron energy loss spectroscopy (EELS). Columnar growth of polycrystalline grain structure, twins, stacking faults, dislocations and intermediate layers were characteristic of the diamond films. No sp2 bonding character in the grains, defects of grain boundaries was detected by EELS.

Duke Authors

Cited Authors

  • Williams, BE; Glass, JT; Davis, RF; Kobashi, K

Published Date

  • 1990

Published In

  • Journal of Crystal Growth

Volume / Issue

  • 99 / 1 -4 pt 2

Start / End Page

  • 1168 - 1176

Citation Source

  • SciVal