Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

The extreme thermal and electronic properties of diamond and of silicon carbide, and the direct band gap of gallium nitride, provide multiplicative combinations of attributes which lead to the highest figures of merit for any semiconductor materials for possible use in high power, high speed, high temperature and high frequency applications. The deposition of monocrystalline diamond, at or below 1 atm total pressure and at a temperature T< 1273 K, has been achieved on diamond substrates; the deposited film has been polycrystalline on all other substrates but the achievement is no less significant. For electronic applications, heteroepitaxy of single-crystal films of diamond, an understanding of mechanisms of nucleation and growth, methods of impurity introduction and activation, and further device development must be achieved. Stoichiometric gallium nitride free of nitrogen vacancies has apparently not been obtained. Thus, knowledge of the defect chemistry of this material, the growth of semiconducting films on foreign substrates, and the development of insulating layers and of their low temperature deposition as well as device fabrication procedures must be achieved. By contrast, all of these problems have already been solved for silicon carbide, including the operation of a MOSFET at 923 K - the highest operating temperature ever reported for a field-effect device. However, considerable research remains to be done regarding the development of large silicon carbide substrates, of ohmic and rectifying contacts, of new types of devices, and of low temperature techniques for the deposition of insulating layers. Fugitive donor and acceptor species in unintentionally doped samples must also be identified and controlled. © 1988.

Duke Authors

Cited Authors

  • Davis, RF; Sitar, Z; Williams, BE; Kong, HS; Kim, HJ; Palmour, JW; Edmond, JA; Ryu, J; Glass, JT; Jr, CHC

Published Date

  • 1988

Published In

Volume / Issue

  • 1 / 1

Start / End Page

  • 77 - 104

International Standard Serial Number (ISSN)

  • 0921-5107

Citation Source

  • SciVal