Epitaxial growth, doping and analytical characterization of monocrystalline beta-SiC semiconductor thin flims
High purity monocrystalline β-SiC films have been grown on Si (100) and α-SiC (0001) at 1660K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films produced on Si (100) have also been doped with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Films grown on Si contain concentrations of line and planar defects, especially in the interface region; those produced on α-SiC are virtually defect-free. The ratios of ionized dopant concentration to total dopant concentration for N, P, B and Al are 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P, and B at 1660K were determined to be approximately 2×1020, 1×1018, and 8×1018 cm-3, respectively; that of Al exceeds 2×1019 cm-3. High temperature ion implantation and dynamic and post annealing procedures result in a small concentration of defects in the implanted region, in contrast to similar research at low temperatures.
