Schottky diodes from asymmetric metal-nanotube contacts

Published

Journal Article

Carbon nanotube Schottky diodes were fabricated using asymmetric metal-nanotube contacts. These devices were prepared from semiconducting single-walled carbon nanotubes contacted by one Al or Ti electrode and one Au electrode. Nanotubes formed a low resistance contact with the Au electrode and a Schottky contact with the Al or Ti electrode. Electronic transport through the Schottky barriers was determined by the competition between tunneling and thermionic emission, which could be tuned by a back gate voltage. © 2006 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Lu, C; An, L; Fu, Q; Liu, J; Zhang, H; Murduck, J

Published Date

  • April 10, 2006

Published In

Volume / Issue

  • 88 / 13

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2190707

Citation Source

  • Scopus