Schottky diodes from asymmetric metal-nanotube contacts
Journal Article (Journal Article)
Carbon nanotube Schottky diodes were fabricated using asymmetric metal-nanotube contacts. These devices were prepared from semiconducting single-walled carbon nanotubes contacted by one Al or Ti electrode and one Au electrode. Nanotubes formed a low resistance contact with the Au electrode and a Schottky contact with the Al or Ti electrode. Electronic transport through the Schottky barriers was determined by the competition between tunneling and thermionic emission, which could be tuned by a back gate voltage. © 2006 American Institute of Physics.
Full Text
Duke Authors
Cited Authors
- Lu, C; An, L; Fu, Q; Liu, J; Zhang, H; Murduck, J
Published Date
- April 10, 2006
Published In
Volume / Issue
- 88 / 13
International Standard Serial Number (ISSN)
- 0003-6951
Digital Object Identifier (DOI)
- 10.1063/1.2190707
Citation Source
- Scopus