Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?

Published

Journal Article

In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species being molecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context. © 1989 Springer-Verlag.

Full Text

Duke Authors

Cited Authors

  • Gösele, U; Ahn, KY; Marioton, BPR; Tan, TY; Lee, ST

Published Date

  • March 1, 1989

Published In

Volume / Issue

  • 48 / 3

Start / End Page

  • 219 - 228

Electronic International Standard Serial Number (EISSN)

  • 1432-0630

International Standard Serial Number (ISSN)

  • 0721-7250

Digital Object Identifier (DOI)

  • 10.1007/BF00619388

Citation Source

  • Scopus