ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON.
Publication
, Journal Article
Yang, KH; Tan, TY
Published in: Materials Research Society Symposia Proceedings
December 1, 1985
We report some results of an experiment designed to study the interaction of extrinsic-gettering (EG) and intrinsic-gettering (IG) schemes. We found that mechanical abrasion introduces interstitial type dislocations into the wafer backside, and produces a concave wafer frontside. The EG dislocation network enhances SiO//2 precipitation which is responsible for the IG activity. The enhancement is most significant near the wafer backside. The interaction arises most probably because the dislocation network serves as a very efficient source/sink for point defects.
Duke Scholars
Published In
Materials Research Society Symposia Proceedings
ISSN
0272-9172
Publication Date
December 1, 1985
Volume
36
Start / End Page
223 / 229
Citation
APA
Chicago
ICMJE
MLA
NLM
Yang, K. H., & Tan, T. Y. (1985). ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON. Materials Research Society Symposia Proceedings, 36, 223–229.
Yang, K. H., and T. Y. Tan. “ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON.” Materials Research Society Symposia Proceedings 36 (December 1, 1985): 223–29.
Yang KH, Tan TY. ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON. Materials Research Society Symposia Proceedings. 1985 Dec 1;36:223–9.
Yang, K. H., and T. Y. Tan. “ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON.” Materials Research Society Symposia Proceedings, vol. 36, Dec. 1985, pp. 223–29.
Yang KH, Tan TY. ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON. Materials Research Society Symposia Proceedings. 1985 Dec 1;36:223–229.
Published In
Materials Research Society Symposia Proceedings
ISSN
0272-9172
Publication Date
December 1, 1985
Volume
36
Start / End Page
223 / 229