ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON.

We report some results of an experiment designed to study the interaction of extrinsic-gettering (EG) and intrinsic-gettering (IG) schemes. We found that mechanical abrasion introduces interstitial type dislocations into the wafer backside, and produces a concave wafer frontside. The EG dislocation network enhances SiO//2 precipitation which is responsible for the IG activity. The enhancement is most significant near the wafer backside. The interaction arises most probably because the dislocation network serves as a very efficient source/sink for point defects.

Duke Authors

Cited Authors

  • Yang, KH; Tan, TY

Published Date

  • 1985

Published In

  • Materials Research Society Symposia Proceedings

Volume / Issue

  • 36 /

Start / End Page

  • 223 - 229

Citation Source

  • SciVal