Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation


Journal Article

Single-crystal silicon samples have been made disordered by irradiation with pulses from a frequency-quadrupled neodynium-doped-yttrium-aluminum-garnet laser with 10-8-s pulse length. We have studied the resulting amorphous layer by transmission electron microscopy and He-ion backscattering. Irradiation with longer-wavelength pulses restored the disordered layer to its original crystalline state. This order-disorder laser-radiation-induced transition is repeatable. © 1979 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Tsu, R; Hodgson, RT; Tan, TY; Baglin, JE

Published Date

  • January 1, 1979

Published In

Volume / Issue

  • 42 / 20

Start / End Page

  • 1356 - 1358

International Standard Serial Number (ISSN)

  • 0031-9007

Digital Object Identifier (DOI)

  • 10.1103/PhysRevLett.42.1356

Citation Source

  • Scopus