Ultra thin-film MSM photodetector with low parasitic capacitance
Journal Article
Parasitic capacitance analysis of an ultra thin-film Metal-Semiconductor- Metal(MSM) photodetector(PD) having the lowest capacitance per unit surface area is reported in this paper. Through cladding layers removing process using etching, 50-60% decrease in the parasitic capacitance of the MSM photodetectors, compared to the conventional inverted thin-film MSM photodetectors, was obtained. The parasitic capacitance of the MSM photodetectors depending on etching time was optimized and analyzed using RF modeling techniques in this report. © 2006 IEEE.
Full Text
Duke Authors
Cited Authors
- Cha, C; Lee, Y; Jokerst, NM; Brooke, MA; Seo, SW
Published Date
- January 1, 2006
Published In
- Proceedings of Ieee Sensors
Start / End Page
- 174 - 176
Digital Object Identifier (DOI)
- 10.1109/ICSENS.2007.355747
Citation Source
- Scopus