Ultra thin-film MSM photodetector with low parasitic capacitance

Journal Article

Parasitic capacitance analysis of an ultra thin-film Metal-Semiconductor- Metal(MSM) photodetector(PD) having the lowest capacitance per unit surface area is reported in this paper. Through cladding layers removing process using etching, 50-60% decrease in the parasitic capacitance of the MSM photodetectors, compared to the conventional inverted thin-film MSM photodetectors, was obtained. The parasitic capacitance of the MSM photodetectors depending on etching time was optimized and analyzed using RF modeling techniques in this report. © 2006 IEEE.

Full Text

Duke Authors

Cited Authors

  • Cha, C; Lee, Y; Jokerst, NM; Brooke, MA; Seo, S-W

Published Date

  • 2006

Published In

  • Proceedings of IEEE Sensors

Start / End Page

  • 174 - 176

Digital Object Identifier (DOI)

  • 10.1109/ICSENS.2007.355747