A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections
Journal Article
A wideband preamplifier was designed and fabricated using a 0.18 μm CMOS technology. The amplifier was heterogeneously integrated with a thin film InGaAs inverted photodetector. A successful demonstration at a bit rate of 10 Gbps was reported. All the stages were designed and laid out in a fully differential manner to ensure good immunity.
Duke Authors
Cited Authors
- Song, I; Seo, SW; Hyun, S; Kim, D; Huang, S; Brooke, M; Jokerst, NM; Brown, A
Published Date
- December 1, 2004
Published In
Volume / Issue
- 2 /
Start / End Page
- 517 - 518
International Standard Serial Number (ISSN)
- 1092-8081
Citation Source
- Scopus