A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections

Journal Article

A wideband preamplifier was designed and fabricated using a 0.18 μm CMOS technology. The amplifier was heterogeneously integrated with a thin film InGaAs inverted photodetector. A successful demonstration at a bit rate of 10 Gbps was reported. All the stages were designed and laid out in a fully differential manner to ensure good immunity.

Duke Authors

Cited Authors

  • Song, I; Seo, SW; Hyun, S; Kim, D; Huang, S; Brooke, M; Jokerst, NM; Brown, A

Published Date

  • December 1, 2004

Published In

Volume / Issue

  • 2 /

Start / End Page

  • 517 - 518

International Standard Serial Number (ISSN)

  • 1092-8081

Citation Source

  • Scopus