A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections
A wideband preamplifier was designed and fabricated using a 0.18 μm CMOS technology. The amplifier was heterogeneously integrated with a thin film InGaAs inverted photodetector. A successful demonstration at a bit rate of 10 Gbps was reported. All the stages were designed and laid out in a fully differential manner to ensure good immunity.