Thin film GaN metal-semiconductor-metal photodetectors integrated onto silicon

Journal Article

The metal-semiconductor-metal (MSM) photodetector dark current and responsivity results for the growth of gallium nitride on lithium gallate substrates were reported. The heterogeneous integration of thin film gallium nitride MSM detectors onto host substrates was discussed. It was found that the dark current before and after bonding is competitive and does not change significantly after integration.

Duke Authors

Cited Authors

  • Seo, S; Kang, S; Huang, S; Lee, K; Doolittle, W; Jokerst, N; Brown, A; Brooke, M

Published Date

  • January 1, 2002

Published In

  • Pacific Rim Conference on Lasers and Electro Optics, Cleo Technical Digest

Start / End Page

  • 630 - 631

Citation Source

  • Scopus