Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps

Journal Article

An overview is given on the hybrid integration of a thin film large area, low capacitance InGaAsP/InP inverted metal-semiconductor-metal photodetector onto a Si CMOS differential receiver circuit. The integrated receiver has a measured bit-error-rate (BER) of 10-10 at 0.9 Gbps and 10-11 at 650 Mbps.

Duke Authors

Cited Authors

  • Vrazel, M; Chang, JJ; Brooke, M; Jokerst, NM; Dagnall, G; Brown, A

Published Date

  • 2000

Published In

  • Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volume / Issue

  • 2 /

Start / End Page

  • 884 - 885