Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps
Journal Article
An overview is given on the hybrid integration of a thin film large area, low capacitance InGaAsP/InP inverted metal-semiconductor-metal photodetector onto a Si CMOS differential receiver circuit. The integrated receiver has a measured bit-error-rate (BER) of 10-10 at 0.9 Gbps and 10-11 at 650 Mbps.
Duke Authors
Cited Authors
- Vrazel, M; Chang, JJ; Brooke, M; Jokerst, NM; Dagnall, G; Brown, A
Published Date
- December 1, 2000
Published In
Volume / Issue
- 2 /
Start / End Page
- 884 - 885
International Standard Serial Number (ISSN)
- 1092-8081
Citation Source
- Scopus