A thin film large area, low capacitance, high responsivity InGaAs/InP inverted metal-semiconductor-metal (I-MSM) was hybrid integrated onto a Si CMOS differential receiver circuit. The integrated receiver demonstrated a bit-error-rate (BER) of 10-11 at 414 Mbps and 0.10×10-10 at 480 Mbps. The alignment tolerance of this receiver was modeled and measured at 200 Mbps, and the theoretical results correspond well to experimental data.