Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect

Journal Article

Optical interconnection through stacked silicon foundry complementary metal-oxide-semiconductor (CMOS) circuitry has been demonstrated at a data rate of over 40 Mb/s with an open eye diagram. The system consists of a 0.8-μm transmitter and receiver realized in foundry digital CMOS. The use of digital CMOS enables on-chip integration with more complex digital systems, such as a microprocessor. Two layers of these circuits were integrated with thin-film InP-based light emitting diodes and metal-semiconductor-metal photodetectors operating at 1.3 μm (to which the silicon is transparent) to enable vertical optical through-Si communication between the stacked silicon circuits.

Duke Authors

Cited Authors

  • Vendier, O; Bond, SW; Lee, M; Jung, S; Brooke, M; Jokerst, NM; Leavitt, RP

Published Date

  • 1998

Published In

Volume / Issue

  • 10 / 3

Start / End Page

  • 606 - 608

International Standard Serial Number (ISSN)

  • 1041-1135