Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect
Publication
, Journal Article
Vendier, O; Bond, SW; Lee, M; Jung, S; Brooke, M; Jokerst, NM; Leavitt, RP
Published in: IEEE Photonics Technology Letters
March 1, 1998
Optical interconnection through stacked silicon foundry complementary metal-oxide-semiconductor (CMOS) circuitry has been demonstrated at a data rate of over 40 Mb/s with an open eye diagram. The system consists of a 0.8-μm transmitter and receiver realized in foundry digital CMOS. The use of digital CMOS enables on-chip integration with more complex digital systems, such as a microprocessor. Two layers of these circuits were integrated with thin-film InP-based light emitting diodes and metal-semiconductor-metal photodetectors operating at 1.3 μm (to which the silicon is transparent) to enable vertical optical through-Si communication between the stacked silicon circuits.
Duke Scholars
Published In
IEEE Photonics Technology Letters
ISSN
1041-1135
Publication Date
March 1, 1998
Volume
10
Issue
3
Start / End Page
606 / 608
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Vendier, O., Bond, S. W., Lee, M., Jung, S., Brooke, M., Jokerst, N. M., & Leavitt, R. P. (1998). Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect. IEEE Photonics Technology Letters, 10(3), 606–608.
Vendier, O., S. W. Bond, M. Lee, S. Jung, M. Brooke, N. M. Jokerst, and R. P. Leavitt. “Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect.” IEEE Photonics Technology Letters 10, no. 3 (March 1, 1998): 606–8.
Vendier O, Bond SW, Lee M, Jung S, Brooke M, Jokerst NM, et al. Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect. IEEE Photonics Technology Letters. 1998 Mar 1;10(3):606–8.
Vendier, O., et al. “Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect.” IEEE Photonics Technology Letters, vol. 10, no. 3, Mar. 1998, pp. 606–08.
Vendier O, Bond SW, Lee M, Jung S, Brooke M, Jokerst NM, Leavitt RP. Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect. IEEE Photonics Technology Letters. 1998 Mar 1;10(3):606–608.
Published In
IEEE Photonics Technology Letters
ISSN
1041-1135
Publication Date
March 1, 1998
Volume
10
Issue
3
Start / End Page
606 / 608
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics