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Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors

Publication ,  Journal Article
Chun, C; Vendier, O; Moon, E; Laskar, J; Ki, HC; Jokerst, NM; Brooke, M
Published in: IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
January 1, 1998

A GaAs-based amplifier has been designed and integrated with a large area, high efficiency, thin film InP-based metal-semiconductor-metal photodetector. Thin film integration is a hybrid integration scheme that minimizes the parasitics between the InP detector and the GaAs circuit to the order of integrated circuits. The GaAs integrated circuits are fabricated using a commercial TriQuint Semiconductor foundry process, demonstrating the use of standard GaAs-based foundry circuits for long wavelength, highly integrated, high speed, low cost photoreceivers. Utilizing thin film integration to minimize interconnect parasitics, a 1.55 μm wavelength receiver has been demonstrated at 1 GB/s, and initial results for a 10 GB/s receiver under fabrication are presented.

Duke Scholars

Published In

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Publication Date

January 1, 1998

Start / End Page

187 / 190
 

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Chun, C., Vendier, O., Moon, E., Laskar, J., Ki, H. C., Jokerst, N. M., & Brooke, M. (1998). Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, 187–190.
Chun, C., O. Vendier, E. Moon, J. Laskar, H. C. Ki, N. M. Jokerst, and M. Brooke. “Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors.” IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, January 1, 1998, 187–90.
Chun C, Vendier O, Moon E, Laskar J, Ki HC, Jokerst NM, et al. Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 1998 Jan 1;187–90.
Chun, C., et al. “Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors.” IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers, Jan. 1998, pp. 187–90.
Chun C, Vendier O, Moon E, Laskar J, Ki HC, Jokerst NM, Brooke M. Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 1998 Jan 1;187–190.

Published In

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Publication Date

January 1, 1998

Start / End Page

187 / 190