Integrated 1.55 μm receivers using GaAs MMICs and thin film InP detectors

Journal Article

A GaAs-based amplifier has been designed and integrated with a large area, high efficiency, thin film InP-based metal-semiconductor-metal photodetector. Thin film integration is a hybrid integration scheme that minimizes the parasitics between the InP detector and the GaAs circuit to the order of integrated circuits. The GaAs integrated circuits are fabricated using a commercial TriQuint Semiconductor foundry process, demonstrating the use of standard GaAs-based foundry circuits for long wavelength, highly integrated, high speed, low cost photoreceivers. Utilizing thin film integration to minimize interconnect parasitics, a 1.55 μm wavelength receiver has been demonstrated at 1 GB/s, and initial results for a 10 GB/s receiver under fabrication are presented.

Duke Authors

Cited Authors

  • Chun, C; Vendier, O; Moon, E; Laskar, J; Ki, HC; Jokerst, NM; Brooke, M

Published Date

  • January 1, 1998

Published In

  • Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers

Start / End Page

  • 187 - 190

Citation Source

  • Scopus