Integrated 155 Mbps digital transmitter using a 1.3 μm wavelength thin film LED

Published

Journal Article

A digital transmitter was developed by bonding Indium phosphide based thin film surface emitters directly to digital silicon complementary metal oxide semiconductor (CMOS) circuits operating at 155 Mbps with digital I/O for application in a three dimensional (3D), through-silicon, communication system. The digital CMOS driver circuitry consists of a 2-stage tapered buffer, a current switch, and a constant bias current source. The output stage includes a current source to DC bias the light emitting diode (LED) for increased speed. Careful layout design of the power transistors was performed to minimize any series resistance and improve the current carrying capability.

Duke Authors

Cited Authors

  • Bond, SW; Lee, M; Chang, JJ; Vendier, O; Hou, Z; Brooke, M; Jokerst, NM; Leavitt, RP

Published Date

  • December 1, 1996

Published In

Volume / Issue

  • 1 /

Start / End Page

  • 342 - 343

International Standard Serial Number (ISSN)

  • 1092-8081

Citation Source

  • Scopus