Integrated 200 Mbit/s receiver: silicon CMOS transimpedance amplifier with a thin-film InGaAs photodetector

Journal Article

Digital CMOS can be used for analog receiver designs if the packaging parasitics can be sufficiently reduced. Using direct bonding of a thin-film detector to a CMOS circuit, high-performance receivers can be realized in low-cost, standard foundry CMOS. This report presents the first demonstrations of an integrated digital CMOS silicon receiver operating at 200 Mbps.

Duke Authors

Cited Authors

  • Vendier, O; Lee, M; Jokerst, NM; Brooke, M; Leavitt, RP

Published Date

  • 1996

Published In

  • Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Start / End Page

  • 402 - 403