CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps
Low cost silicon digital CMOS foundry circuitry is a prime candidate for low cost, high performance optoelectronic receivers. However, silicon detectors are not as efficient as compound semiconductor detectors. Hybrid packaging of compound semiconductor detectors and silicon circuitry places limitations on the silicon circuitry due to the package limitations. In order to utilize high efficiency, high speed compound semiconductors with silicon circuitry, and to relax the circuit design constraints, this article reports the integration of a double heterostructure GaAs-based high-efficiency inverted metal-semiconductor-metal (I-MSM) thin film photodetector bonded onto the silicon receiver circuit.
Lee, M; Vendier, O; Brooke, MA; Jokerst, NM; Leavitt, RP
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