Silicon CMOS optical receiver circuit with integrated compound semiconductor thin-film P-i-N detector

Journal Article

Low cost, high complexity silicon CMOS circuitry is an ideal candidate for low cost, high performance integrated optoelectronics. The paper presents a study on the integration of GaAs and InP based thin film P-i-N detectors with a five stage silicon CMOS transimpedance amplifier. This integrated system utilizes low cost foundry silicon CMOS circuitry coupled with thin film devices which are bonded to this circuit in the post processing steps utilizing only standard microelectronics materials and processes to produce a low cost hybrid integrated circuit.

Duke Authors

Cited Authors

  • Lee, M; Camperi-Ginestet, C; Brooke, MA; Jokerst, NM

Published Date

  • 1994

Published In

  • LEOS Summer Topical Meeting

Start / End Page

  • 58 - 59