Band bending and adsorption/desorption kinetics on N-polar GaN surfaces


Journal Article

Highly reactive N-polar [000-1] GaN surfaces were analyzed using spectroscopic ellipsometry. Following exposure to air, observed changes in the pseudodielectric function near the GaN band edge indicate that surface contamination reduces the band bending. A subsequent Ga adsorption/desorption experiment on pristine N-polar GaN indicates that it contains a mixture of Ga-terminated and N-terminated surfaces. During deposition, Ga adatoms preferentially bond to the dangling bonds on the N-terminated surface: the measured 3.19 eV desorption activation energy equals the Ga-N decomposition energy. Further deposition forms a 1 ML Ga wetting layer whose 2.78 eV desorption activation energy is comparable to the Ga sublimation energy. © 2009 American Vacuum Society.

Full Text

Duke Authors

Cited Authors

  • Choi, S; Kim, TH; Wu, P; Brown, A; Everitt, HO; Losurdo, M; Bruno, G

Published Date

  • February 17, 2009

Published In

Volume / Issue

  • 27 / 1

Start / End Page

  • 107 - 112

International Standard Serial Number (ISSN)

  • 1071-1023

Digital Object Identifier (DOI)

  • 10.1116/1.3054345

Citation Source

  • Scopus