Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption


Journal Article

Indium kinetics and evidence for indium segregation on the GaN (0001) surface are investigated via in situ spectroscopic ellipsometry. Indium deposition exhibits two stable states at coverages of 1.0 and 1.7 ML within the temperature range of 630-688°C. Formation of each layer is governed by two kinetic processes: nuclei formation and nuclei-mediated layer adsorption. The measured desorption activation energies of nuclei of the first (2.04 eV) and second (2.33 eV) monolayers are lower than the desorption activation energies of the aggregated first (2.64 eV) and second (2.53 eV) monolayers, respectively. This suggests that adatoms preferentially interact with the nuclei and laterally aggregate. © 2008 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Choi, S; Kim, TH; Wolter, S; Brown, A; Everitt, HO; Losurdo, M; Bruno, G

Published Date

  • March 20, 2008

Published In

Volume / Issue

  • 77 / 11

Electronic International Standard Serial Number (EISSN)

  • 1550-235X

International Standard Serial Number (ISSN)

  • 1098-0121

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.77.115435

Citation Source

  • Scopus