Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry


Journal Article

The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0 0 0 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termination through nitridation, GaN nucleation and growth, are monitored in real time. Some key relationships between growth mode, as observed by ellipsometry, and material properties are given. © 2005 Elsevier B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Losurdo, M; Bruno, G; Kim, TH; Choi, S; Brown, A; Moto, A

Published Date

  • October 15, 2005

Published In

Volume / Issue

  • 284 / 1-2

Start / End Page

  • 156 - 165

International Standard Serial Number (ISSN)

  • 0022-0248

Digital Object Identifier (DOI)

  • 10.1016/j.jcrysgro.2005.07.016

Citation Source

  • Scopus