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Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots

Publication ,  Journal Article
Wang, YQ; Wang, ZL; Shen, JJ; Brown, A
Published in: Journal of Crystal Growth
May 1, 2003

In this paper, we report microstructural characterization of InAs/GaAs quantum dots grown by molecular beam epitaxy. The InAs islands were annealed in a range of temperatures under Pa flux. Prior to annealing, it is shown that the InAs islands are mainly lens-shaped, mostly vertically self-aligned and coherent to GaAs (100) substrate. Relaxation by misfit dislocations is occasionally found. Abnormal relaxation is observed in larger islands. Stacking faults in a V-shape are frequently formed in the lateral sides of these regions. No obvious change in island density and self-alignment occurred when the dots are annealed under Pa flux at 300°C. In contrast, remarkable changes took place upon annealing at 350°C. The vertically self-aligned islands disappear, and smooth interfaces were obtained. This morphological transition is argued to result from the replacement of arsenic by phosphorus in the InAs dots. The damage to the crystalinity of the abnormally relaxed regions cannot be removed by the post-growth annealing. The remarkable morphological transition by post-growth annealing under dissimilar anion atmosphere offers another possibility for tuning the dot morphology and hence their electronic properties. © 2003 Elsevier Science B.V. All rights reserved.

Duke Scholars

Published In

Journal of Crystal Growth

DOI

ISSN

0022-0248

Publication Date

May 1, 2003

Volume

252

Issue

1-3

Start / End Page

58 / 67

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Wang, Y. Q., Wang, Z. L., Shen, J. J., & Brown, A. (2003). Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots. Journal of Crystal Growth, 252(1–3), 58–67. https://doi.org/10.1016/S0022-0248(02)02527-7
Wang, Y. Q., Z. L. Wang, J. J. Shen, and A. Brown. “Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots.” Journal of Crystal Growth 252, no. 1–3 (May 1, 2003): 58–67. https://doi.org/10.1016/S0022-0248(02)02527-7.
Wang YQ, Wang ZL, Shen JJ, Brown A. Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots. Journal of Crystal Growth. 2003 May 1;252(1–3):58–67.
Wang, Y. Q., et al. “Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots.” Journal of Crystal Growth, vol. 252, no. 1–3, May 2003, pp. 58–67. Scopus, doi:10.1016/S0022-0248(02)02527-7.
Wang YQ, Wang ZL, Shen JJ, Brown A. Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots. Journal of Crystal Growth. 2003 May 1;252(1–3):58–67.
Journal cover image

Published In

Journal of Crystal Growth

DOI

ISSN

0022-0248

Publication Date

May 1, 2003

Volume

252

Issue

1-3

Start / End Page

58 / 67

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry