Thermodynamic analysis of anion exchange during heteroepitaxy

Published

Journal Article

A thermodynamic approach is presented to assess the extent of anion exchange reactions during the heteroepitaxy (molecular beam epitaxy) of dissimilar anion III-V compound semiconductor structures. It is shown that the extent of anion exchange can be predicted by the change in the Gibbs free energy. Bond strength changes can only be used as a guide in comparing the relative tendency for exchange, rather than as a criterion. The driving force for anion exchange strongly depends on the conditions during interface formation. A number of important factors, including bond strength, misfit strain energy, surface structure and energy, the equilibrium between dimers V2 and tetramers V4, and segregation are discussed in terms of their contributions to the thermodynamics. © 2002 Elsevier Science B.V. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Wang, YQ; Wang, ZL; Brown, T; Brown, A; May, G

Published Date

  • July 1, 2002

Published In

Volume / Issue

  • 242 / 1-2

Start / End Page

  • 5 - 14

International Standard Serial Number (ISSN)

  • 0022-0248

Digital Object Identifier (DOI)

  • 10.1016/S0022-0248(02)01288-5

Citation Source

  • Scopus