Skip to main content

Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy

Publication ,  Journal Article
Brown, T; Brown, A; May, G
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
July 1, 2002

Anion exchange at the interfaces of mixed anion heterostructures were studied and characterized via high-resolution x-ray diffraction analysis of anion exposed static surfaces. Superlattices were formed primarily due to anion exchange and related processes occurring at the interfaces. Composition profiles of the interfaces for each superlattice were determined using dynamical simulations.

Duke Scholars

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

July 1, 2002

Volume

20

Issue

4

Start / End Page

1771 / 1776

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Brown, T., Brown, A., & May, G. (2002). Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1771–1776. https://doi.org/10.1116/1.1491988
Brown, T., A. Brown, and G. May. “Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 4 (July 1, 2002): 1771–76. https://doi.org/10.1116/1.1491988.
Brown T, Brown A, May G. Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 Jul 1;20(4):1771–6.
Brown, T., et al. “Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, July 2002, pp. 1771–76. Scopus, doi:10.1116/1.1491988.
Brown T, Brown A, May G. Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 Jul 1;20(4):1771–1776.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

July 1, 2002

Volume

20

Issue

4

Start / End Page

1771 / 1776

Related Subject Headings

  • Applied Physics
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences