Growth dynamics of InGaAs/GaAs by MBE

Journal Article

The growth dynamics of the InGaAs/GaAs system have been investigated by desorption mass spectrometry (DMS). Indium desorption spectra indicate the presence of one or two desorption mechanisms depending on the V/III beam equivalent pressure ratio. The activation energy associated with one of the desorption processes is found to be 1.3 e V and independent of V/III ratio and arsenic species. Analysis of the decay curve allows the calculation of the indium surface population during growth. This population is compared for the different growth conditions investigated. Indium incorporation coefficient curves as a function of substrate temperature are presented. Indium incorporation is found to be enhanced using high V/III ratio and the arsenic dimer, As2.

Duke Authors

Cited Authors

  • Fournier, F; Metzger, RA; Doolittle, A; Brown, AS; Carter-Coman, C; Jokerst, NM; Bicknell-Tassius, R

Published Date

  • 1997

Published In

  • Journal of Crystal Growth

Volume / Issue

  • 175-176 / PART 1

Start / End Page

  • 203 - 210