Analysis of GaAs substrate removal etching with citric acid:H 2 O 2 and NH 4 OH:H 2 O 2 for application to compliant substrates

Journal Article

New properties associated with selective substrate removal have been observed in the application of this technique to GaAs thin film compliant substrates. Citric acid- and NH 4OH-based etches are used to selectively etch the GaAs substrate and stop on an AlAs layer. The AlAs stop-etch layer is transformed into a layer that is almost twice as thick as the original layer, mismatched to the remaining GaAs epilayer, and has a refractive index around 2.0. Replacement of the single AlAs stop etch layer with multiple thin AlGaAs stop etch layers is proposed to alleviate this problem.

Duke Authors

Cited Authors

  • Carter-Coman, C; Bicknell-Tassius, R; Benz, RG; Brown, AS; Jokerst, NM

Published Date

  • 1997

Published In

Volume / Issue

  • 144 / 2

Start / End Page

  • L29 - L31

International Standard Serial Number (ISSN)

  • 0013-4651