GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology


Journal Article

High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a gm of 600 mS/mm and an extrapolated fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz.

Duke Authors

Cited Authors

  • Delaney, MJ; Chou, CS; Larson, LE; Jensen, JF; Deakin, DS; Brown, AS; Hooper, WW; Thompson, MA; McCray, LG; Rosenbaum, SE

Published Date

  • May 1, 1989

Published In

International Standard Serial Number (ISSN)

  • 0886-5930

Citation Source

  • Scopus