The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

Published

Journal Article

New tunnel current measurements of resonant tunneling at voltage-biased quantum Hall effect edge were reported. Results showed that the tunneling density of states at a sharp quantum Hall edge obeyed a power-law form. The fits to this data demonstrated the robustness of the lever-arm model in quantitatively describing all observed features associated with the tunneling resonance.

Full Text

Duke Authors

Cited Authors

  • Grayson, M; Tsui, DC; Pfeiffer, LN; West, KW; Chang, AM

Published Date

  • January 1, 2002

Published In

Volume / Issue

  • 12 / 1-4

Start / End Page

  • 80 - 83

International Standard Serial Number (ISSN)

  • 1386-9477

Digital Object Identifier (DOI)

  • 10.1016/S1386-9477(01)00247-8

Citation Source

  • Scopus