1/f noise in the tunneling current of thin gate oxides


Journal Article

We have observed fluctuations in the tunneling current through 3.5 nm gate oxides with a 1/f power spectrum where f is the frequency. For voltages in the direct tunneling regime we find an anomalous current dependence of the noise relative to previous observations of noise in thin oxides. We present a simplified model for the current noise in terms of fluctuations in a trap assisted tunneling current that exists in the oxide in addition to the direct tunneling current. Current noise appears to be a very sensitive probe of trap assisted tunneling and degradation in oxides.

Full Text

Duke Authors

Cited Authors

  • Alers, GB; Monroe, D; Krisch, KS; Weir, BE; Chang, AM

Published Date

  • January 1, 1996

Published In

Volume / Issue

  • 428 /

Start / End Page

  • 311 - 315

International Standard Serial Number (ISSN)

  • 0272-9172

Digital Object Identifier (DOI)

  • 10.1557/proc-428-311

Citation Source

  • Scopus