Quenching of the Hall effect in a novel geometry


Journal Article

We study the Hall effect at low magnetic fields in ballistic GaAs-AlxGa1 - xAs heterostructure Hall junctions that contain four, three, two, or one narrow constrictions in the junction region. These geometries are investigated to determine the necessary condition for observation of the quenching of the Hall effect. We find that only the four constriction geometry shows a genuine quenching. By applying a backgate bias, quenching is produced within a finite electron density range. Our results are interpreted within the framework of the Büttiker-Landauer formulas in terms of junction scattering of the electrons. © 1990.

Full Text

Duke Authors

Cited Authors

  • Chang, AM; Chang, TY

Published Date

  • April 2, 1990

Published In

Volume / Issue

  • 229 / 1-3

Start / End Page

  • 209 - 211

International Standard Serial Number (ISSN)

  • 0039-6028

Digital Object Identifier (DOI)

  • 10.1016/0039-6028(90)90872-6

Citation Source

  • Scopus