Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization


Journal Article

We report on a new type of structure formed by δ-doping the barrier of an AlxGa1-xAs/GaAs heterostructure. We investigate transport in these structures which reveal that very high quality fractional quantum hall structure occurs as well as systematically high density and mobility (2.2×106 cm2/V·s). The dependence of mobility and density on spacer layer thickness is explored. We show that the observed improvements in 2DEG properties are expected from the spatial localization of the Si dopant. © 1989.

Full Text

Duke Authors

Cited Authors

  • Cunningham, JE; Timp, G; Chang, AM; Chiu, TH; Jan, W; Schubert, EF; Tsung, WT

Published Date

  • February 2, 1989

Published In

Volume / Issue

  • 95 / 1-4

Start / End Page

  • 253 - 256

International Standard Serial Number (ISSN)

  • 0022-0248

Digital Object Identifier (DOI)

  • 10.1016/0022-0248(89)90395-3

Citation Source

  • Scopus