Fractional quantum Hall effect at low temperatures


Journal Article

We report a systematic study of the 23 fractional quantum Hall effect at low temperatures (65-770 mK) for a GaAs-AlxGa1-xAs sample of very high mobility (106 cm2/V sec). We find the 23 Hall plateau to be accurately quantized. The diagonal and Hall resistivities are observed to be activated at each given filling factor ν=nheB around 23. The activation energy has a maximum value, Δmax, at ν=23 and decreases to each side as ν moves away. By varying the sample mobility and density simultaneously with a backgate bias, we find Δmax strongly mobility and magnetic field dependent. © 1983 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Chang, AM; Paalanen, MA; Tsui, DC; Störmer, HL; Hwang, JCM

Published Date

  • January 1, 1983

Published In

Volume / Issue

  • 28 / 10

Start / End Page

  • 6133 - 6136

International Standard Serial Number (ISSN)

  • 0163-1829

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.28.6133

Citation Source

  • Scopus