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Junction formation in silicon by rapid thermal annealing

Publication ,  Journal Article
Fair, RB
Published in: Materials Research Society Symposium Proceedings
January 1, 1993

The feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.

Duke Scholars

Published In

Materials Research Society Symposium Proceedings

DOI

ISSN

0272-9172

Publication Date

January 1, 1993

Volume

300

Start / End Page

545 / 558
 

Citation

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Fair, R. B. (1993). Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings, 300, 545–558. https://doi.org/10.1557/proc-300-545
Fair, R. B. “Junction formation in silicon by rapid thermal annealing.” Materials Research Society Symposium Proceedings 300 (January 1, 1993): 545–58. https://doi.org/10.1557/proc-300-545.
Fair RB. Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings. 1993 Jan 1;300:545–58.
Fair, R. B. “Junction formation in silicon by rapid thermal annealing.” Materials Research Society Symposium Proceedings, vol. 300, Jan. 1993, pp. 545–58. Scopus, doi:10.1557/proc-300-545.
Fair RB. Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings. 1993 Jan 1;300:545–558.

Published In

Materials Research Society Symposium Proceedings

DOI

ISSN

0272-9172

Publication Date

January 1, 1993

Volume

300

Start / End Page

545 / 558