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The role of transient damage annealing in shallow junction formation

Publication ,  Journal Article
Fair, RB
Published in: Nuclear Inst. and Methods in Physics Research, B
1989

Damage introduced into the Si substrate by ion-implantation can have a profound effect on the diffusion of dopants during rapid thermal annealing (RTA) or low temperature furnace annealing. In this paper defect production models are discussed for three cases: 1) low dose B+ implants, 2) B+ implants into preamorphized Si, and 3) BF2+, As+ and P+ self-amorphizing implants. Enhanced diffusion transients of dopants are related to the annealing of point-defect clusters, end-of-range dislocations and projected range misfit dislocations. Diffusion activation energies are reduced by the formation enthalpies of point defects generated by the annealing of implantation-induced damage. © 1989.

Duke Scholars

Published In

Nuclear Inst. and Methods in Physics Research, B

ISSN

0168-583X

Publication Date

1989

Volume

37-38

Issue

C

Start / End Page

371 / 378

Related Subject Headings

  • Applied Physics
  • 0915 Interdisciplinary Engineering
  • 0402 Geochemistry
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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MLA
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Fair, R. B. (1989). The role of transient damage annealing in shallow junction formation. Nuclear Inst. and Methods in Physics Research, B, 3738(C), 371–378.
Fair, R. B. “The role of transient damage annealing in shallow junction formation.” Nuclear Inst. and Methods in Physics Research, B 37–38, no. C (1989): 371–78.
Fair RB. The role of transient damage annealing in shallow junction formation. Nuclear Inst and Methods in Physics Research, B. 1989;37–38(C):371–8.
Fair, R. B. “The role of transient damage annealing in shallow junction formation.” Nuclear Inst. and Methods in Physics Research, B, vol. 37–38, no. C, 1989, pp. 371–78.
Fair RB. The role of transient damage annealing in shallow junction formation. Nuclear Inst and Methods in Physics Research, B. 1989;37–38(C):371–378.
Journal cover image

Published In

Nuclear Inst. and Methods in Physics Research, B

ISSN

0168-583X

Publication Date

1989

Volume

37-38

Issue

C

Start / End Page

371 / 378

Related Subject Headings

  • Applied Physics
  • 0915 Interdisciplinary Engineering
  • 0402 Geochemistry
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics