OBSERVATIONS OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION EXPERIMENTS IN SILICON.
Silicon self-interstitials and vacancies are known to influence atomic diffusion in silicon. While the dual mechanism has been established, to clearly elucidate the roles that vacancies and self-interstitials play, it is necessary to understand their interactions with each other and with the silicon surface. It is the purpose of this paper to review recent experiments in which multiple observations are made involving both diffusion and defect growth or shrinkage, etc. Through such experiments where the dominance of one type of point defect over the other is clear, we can begin to develop reliable models and understand the important experimental conditions and parameters which must be controlled to generate unambiguous data.